Name
Abstract | ||
|---|---|---|
This paper presents a fully integrated gate driver in a 180-nm bipolar CMOS DMOS (BCD) technology with 1.5-A max. gate current, suitable for normally OFF gallium nitride (GaN) power switches, including gate-injection transistors (GIT). Full-bridge driver architecture provides a bipolar and three-level gate drive voltage for a robust and efficient GaN switching. The concept of high-voltage energy s... |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/JSSC.2018.2866948 | IEEE Journal of Solid-State Circuits |
Keywords | Field | DocType |
Logic gates,Gallium nitride,Capacitors,Gate drivers,Transistors,Integrated circuits,Silicon | Logic gate,Capacitor,Computer science,Power semiconductor device,Electronic engineering,CMOS,Power electronics,Transistor,Integrated circuit,Electrical engineering,Gate driver | Journal |
Volume | Issue | ISSN |
53 | 12 | 0018-9200 |
Citations | PageRank | References |
2 | 0.55 | 0 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Achim Seidel | 1 | 7 | 2.99 |
| Bernhard Wicht | 2 | 19 | 9.30 |