Paper Info
Title
Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations
Abstract
Reliability of a GaN-based Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under continuous switching operation is investigated to extract the lifetime under a practical switching application. Switching lifetimes are deduced by varying ambient temperature, switching voltage and switching current to obtain their corresponding acceleration factors. Based on the obtained factors, we determine Switching Safe Operating Area (SSOA) that is proposed recently to define the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> area inside which the device can be switched safely. To our knowledge, this is the first demonstration of SSOA for a GaN power transistor. We estimate the switching lifetime when the HD-GITs are employed in 3 kW totem-pole power factor correction (PFC) circuit under a typical usage condition. The estimated lifetime is 24 years, which we believe is sufficiently long.
Year
DOI
Venue
2018
10.1109/IRPS.2018.8353594
2018 IEEE International Reliability Physics Symposium (IRPS)
Keywords
Field
DocType
Power Transistors,Field effect transistors,Wide band gap semiconductors,Gallium nitride,Semiconductor device reliability
Gallium nitride,Wide-bandgap semiconductor,Safe operating area,Power semiconductor device,Field-effect transistor,Voltage,Power factor,Electronic engineering,Engineering,Transistor,Optoelectronics
Conference
ISSN
ISBN
Citations 
1541-7026
978-1-5386-5480-4
0
PageRank 
References 
Authors
0.34
0
10
Name
Order
Citations
PageRank
Ayanori Ikoshi100.34
Masahiro Toki200.34
Hiroto Yamagiwa300.34
Daijiro Arisawa400.34
Masahiro Hikita500.68
Kazuki Suzuki600.34
Manabu Yanagihara700.34
Yasuhiro Uemoto800.34
Kenichiro Tanaka9106.30
Tetsuzo Ueda1023.60