Title
Innovative GeS<inf>2</inf>/Sb<inf>2</inf>Te<inf>3</inf> based phase change memory for low power applications
Abstract
In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the RESET programming current in unitary GSST devices. We show, how both electrical and thermal confinement improvement is achieved in GSST layers, contributing to the power efficiency increase of the device. Finally, an enhanced thermal stability of more than 290 °C is achieved. By TEM analysis of the fully integrated device we could demonstrate the phase separation between GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Te <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , supporting the hypothesis that the device switches only in a reduced crystalline volume in a fully amorphous matrix. This result enables GSST PCM as a possible candidate for low power/high density memory applications.
Year
DOI
Venue
2017
10.1109/NVMTS.2017.8171305
2017 17th Non-Volatile Memory Technology Symposium (NVMTS)
Keywords
DocType
ISBN
PCM,Phase-Change Memory,GSST,GeS2/Sb2Te3,low power applications
Conference
978-1-5386-0478-6
Citations 
PageRank 
References 
0
0.34
0
Authors
13