Paper Info
Title
Graphene oxide and TiO2 nano-particle composite based nonvolatile memory
Abstract
We report a novel resistive random-access memory (RRAM) device with a graphene oxide (GO) composite film embedded with TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> nano-particles as its resistive switching layer. The efficient physi-(or chem-) sorption of TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> endows the GO/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> composites with superior bipolar resistive switching behaviors, including low switching voltage (about ±1V), tight distributions of HRS and LRS, long retention of more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s and steady endurance performances, which is superior than GO device. The mechanism of conduction and resistance switching are studied.
Year
DOI
Venue
2015
10.1109/NVMTS.2015.7457487
2015 15th Non-Volatile Memory Technology Symposium (NVMTS)
Keywords
Field
DocType
resistive random-access memory,graphene oxide,TiO2 nano-particles,bipolar
Oxide,Optical switch,Graphene,Resistive touchscreen,Composite number,Electronic engineering,Non-volatile memory,Materials science,Nanoparticle,Resistive random-access memory
Conference
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Hong Chao100.34
Fang-Yuan Yuan200.68
Huaqiang Wu32711.21
Ning Deng494.84
Zhong-Zhen Yu500.34
Rongshan Wei600.68