Title
An electronic synapse based on tantalum oxide material
Abstract
An electronic synaptic device with weight modulation and learning function is experimentally demonstrated based on a memristor with Ti/Ta2O5/TaOx/Pt structure, which shows good gradual resistance tuning characteristics. The device exhibits various synaptic functions including potentiation, depression, short/long term plasticity (STP/LTP) and Spike-Time-Dependent-Plasticity (STDP) under both DC sweep and pulse operations. The effects of modification pulse conditions such as pulse amplitude, width and interval on synaptic weight tuning was experimentally investigated. Moreover, the learning behavior similar to memory and consolidation in human brains is obtained in our device, indicating it is a promising candidate device for neural network implementation.
Year
DOI
Venue
2015
10.1109/NVMTS.2015.7457428
2015 15th Non-Volatile Memory Technology Symposium (NVMTS)
Keywords
Field
DocType
electronic synapse,tantalum oxide,synaptic plasticity
Long-term potentiation,Memristor,Pulse (signal processing),Electronic engineering,Modulation,Non-volatile memory,Artificial neural network,Materials science,Pulse-amplitude modulation,Synaptic weight
Conference
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Xue Yang11510.21
Yimao Cai297.26
Zhenxing Zhang300.34
Muxi Yu400.34
Ru Huang518848.74