Name
Title | ||
|---|---|---|
Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application. |
Abstract | ||
|---|---|---|
In this paper, a novel radiation-hardened 14-transistor SRAM bitcell with speed and power optimized [radiation-hardened with speed and power optimized (RSP)-14T] for space application is proposed. By circuit- and layout-level optimization design in a 65-nm CMOS technology, the 3-D TCAD mixed-mode simulation results show that the novel structure is provided with increased resilience to single-event upset as well as single-event–multiple-node upsets due to the charge sharing among OFF-transistors. Moreover, the HSPICE simulation results show that the write speed and power consumption of the proposed RSP-14T are improved by ~65% and ~50%, respectively, compared with those of the radiation hardened design (RHD)-12T memory cell. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/TVLSI.2018.2879341 | IEEE Trans. VLSI Syst. |
Keywords | Field | DocType |
Transistors,Transient analysis,Single event upsets,Layout,Integrated circuit modeling,SRAM cells | Computer science,Static random-access memory,CMOS,Electronic engineering,Charge sharing,Upset,Transistor,Radiation,Power consumption,Memory cell | Journal |
Volume | Issue | ISSN |
27 | 2 | 1063-8210 |
Citations | PageRank | References |
7 | 0.57 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chunyu Peng | 1 | 30 | 10.29 |
| Jiati Huang | 2 | 7 | 0.57 |
| Changyong Liu | 3 | 11 | 2.79 |
| Qiang Zhao | 4 | 7 | 1.24 |
| Songsong Xiao | 5 | 10 | 1.98 |
| Xiulong Wu | 6 | 17 | 5.82 |
| Zhiting Lin | 7 | 11 | 2.67 |
| JunNing Chen | 8 | 19 | 5.75 |
| Xuan Zeng | 9 | 408 | 75.96 |