Title
Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT - Simulation Study.
Year
DOI
Venue
2018
10.1007/978-981-13-5950-7_33
VDAT
Field
DocType
Citations 
Work function,Junction depth,Simulation software,TO-18,Computer science,Electronic engineering,Gate dielectric,Gate oxide,Transconductance,Threshold voltage,Optoelectronics
Conference
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
Preeti Singh1113.14
Vandana Kumari200.34
Manoj Saxena300.34
Mridula Gupta42012.46