Paper Info
Title
High-Efficiency O-Band Mach-Zehnder Modulator Based On Ingaasp/Si Hybrid Mos Capacitor
Abstract
We demonstrated O-band InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding with a thin Al2O3 bonding interface. Owing to the large electron-induced refractive index change in InGaAsP, we successfully achieved V pi L of 0.094 Vcm.
Year
DOI
Venue
2017
10.1364/ofc.2017.w3e.2
2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)
DocType
Citations 
PageRank 
Conference
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
Jaehoon Han101.69
Shinichi Takagi239.69
Mitsuru Takenaka346.86