Title
Silicon Waveguide With Lateral P-I-N Diode For Nonlinearity Compensation By On-Chip Optical Phase Conjugation
Abstract
A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER<HD-FEC after 644-km dispersion-compensated transmission for all channels of a 5xWDM 16-QAM single-polarization signal.
Year
DOI
Venue
2018
10.1364/ofc.2018.w3e.4
2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)
DocType
Citations 
PageRank 
Conference
0
0.34
References 
Authors
0
10
Name
Order
Citations
PageRank
Andrzej Gajda100.34
F. Da Ros200.68
E. P. da Silva300.68
Anna Peczek400.34
Erik Liebig500.34
Andreas Mai602.03
Michael Galili71314.42
l k oxenlowe8811.50
klaus petermann954.24
Zimmermann, L.1027.67