Name
Abstract | ||
|---|---|---|
Resistive memory (RRAM) is a promising technology for high density, non-volatile data storage. Metal-oxide RRAM involves forming and breaking conductive filaments (CF) in an oxide like Hf0
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as the mechanism of data storage. CFs are sub-50 nm in diameter [1], causing sharp temperature gradients within the RRAM oxide. However, imaging individual CFs in RRAM devices is challenging due to their nanoscale size and the presence of the top electrode (TE). While previous works have performed electrical [2] or optical averaging [3] of CF temperature, evaluating the heating of a single CF within RRAM has remained an open problem. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442187 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
RRAM devices,resistive memory,nonvolatile data storage,metal-oxide RRAM,sharp temperature gradients,RRAM oxide,size 100.0 nm,size 50.0 nm | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sanchit Deshmukh | 1 | 0 | 0.34 |
| Miguel Muñoz Rojo | 2 | 0 | 0.68 |
| Eilam Yalon | 3 | 0 | 1.69 |
| Sam Vaziri | 4 | 0 | 0.68 |
| Eric Pop | 5 | 50 | 12.07 |