Name
Title | ||
|---|---|---|
GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology |
Abstract | ||
|---|---|---|
AlGaN/GaN lateral diodes on silicon are considered very promising for next generation power conversion systems owing to the excellent material properties. Typically, the anode recess is a frequently-used and effective technology in reducing the SBD's V
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and RON,SP [1]. However, the rough surface morphology and poor recess depth control in common dry etching are two critical issues that would lead to an increased leakage current and premature breakdown [2]. In this report, we employ a LPCVD Si
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N
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compatible self-terminated, and plasma-free recess technique in an AlGaN/GaN double channel anode-recessed SBD. The anode region is prevented from plasma bombardment and the recess could stop precisely at the upper heterojunction interface with a smooth surface morphology. The SBD with a 15 μm LAC exhibits a low RON,SP of 1.32 mΩ·cm
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, a remarkable VON uniformity and a leakage current of ~ 0.2 μA/mm at -300 V. Moreover, with the assistance of high quality LPCVD Si3N4, a 1.2kV breakdown voltage and a high Baliga' s figure-of-merit of 1.1GW/cm
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are ultimately achieved in the same device. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442184 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
Baliga's Figure-of-Merit,Self-Terminated Low Damage Anode Recessing Technology,power conversion systems,anode region,breakdown voltage,GaN lateral Schottky diodes,smooth surface morphology,upper heterojunction interface,plasma bombardment,plasma-free recess technique,rough surface morphology,anode recess,size 15.0 mum,voltage 1.2 kV,voltage 300.0 V,AlGaN-GaN,Si3N4 | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jingnan Gao | 1 | 0 | 0.34 |
| Jin Yufeng | 2 | 8 | 9.51 |
| Bing Xie | 3 | 0 | 0.34 |
| Cheng P. Wen | 4 | 0 | 1.01 |
| Yilong Hao | 5 | 0 | 0.68 |
| Maojun Wang | 6 | 0 | 1.01 |