Name
Abstract | ||
|---|---|---|
Decreasing the subthreshold swing (SS) of field-effect transistors (FETs) to sub-60 mV/decade at room temperature can enable next-generation low-power electronics [1]. Here, we demonstrate steep switching and high on-current (ION ≈ 400μA/μm) in non-uniformly hole-doped WSe
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>
transistors. By setting up large lateral electric field gradients through spatial variation of doping, we deduce that the abrupt switching behavior is consistent with avalanche (impact ionization [2]) of charge carriers, opening up a new approach to achieve low-power transistors based on ultra-thin 2D materials. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442237 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
lateral electric field gradients,abrupt switching behavior,low-power transistors,ultra-thin 2D materials,sub-thermionic steep switching,subthreshold swing,field-effect transistors,next-generation low-power electronics,spatial variation,impact ionization,charge carriers,hole-doped WSe2 transistors,WSe2 | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Connor J. McClellan | 1 | 0 | 1.01 |
| Eilam Yalon | 2 | 0 | 1.69 |
| Lili Cai | 3 | 0 | 0.34 |
| Saurabh V. Suryavanshi | 4 | 0 | 0.34 |
| Xiaolin Zheng | 5 | 0 | 0.34 |
| Eric Pop | 6 | 50 | 12.07 |