Paper Info
Title
First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applications
Abstract
CMOS-integrated high voltage devices are needed for applications in sensors / actuators and power systems. Current high voltage technologies based on GaN and SiC are not easily integrated with silicon CMOS [1]-[2]. Vacuum nanoelectronic devices based on field emission are a promising alternative approach for achieving high voltage devices on Si. Because vacuum serves as the electron transport medium, the blocking voltages in these devices can be much higher than their solid-state counterparts [3]. To date, however, there have been very few reports of fully integrated field emitters, most of which require high vacuum operation, are not CMOS-compatible and demonstrate poor scalability [4]-[6]. Here, we demonstrate the first vacuum-sealed fully integrated diode and triode field emission arrays that are developed in a scalable, BEOL-compatible process directly on Si. We extensively characterize both diode and triode arrays, demonstrating gate modulated field emission in the on-state and blocking voltages of 200V.
Year
DOI
Venue
2018
10.1109/DRC.2018.8442219
2018 76th Device Research Conference (DRC)
Keywords
DocType
ISSN
CMOS-integrated high voltage devices,actuators,power systems,current high voltage technologies,silicon CMOS,vacuum nanoelectronic devices,blocking voltages,fully integrated field emitters,high vacuum operation,triode field emission arrays,gate modulated field emission,vacuum-sealed fully integrated BEOL-compatible field emission devices,silicon integrated high voltage applications,sensors,electron transport medium,vacuum-sealed fully integrated diode,voltage 200.0 V,Si,GaN,SiC
Conference
1548-3770
ISBN
Citations 
PageRank 
978-1-5386-3029-7
0
0.34
References 
Authors
0
2
Name
Order
Citations
PageRank
Nishita Deka100.34
Vivek Subramanian252.30