Name
Abstract | ||
|---|---|---|
Layered materials like transition metal dichalcogenides (TMDs) and hexagonal boron nitride (h-BN) have been recently demonstrated as the switching layers in resistive random access memory (RRAM) devices [1]-[3], but their switching mechanisms are not yet well understood. In this work, we show resistive memory switching in MoTe
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devices and investigate the thermal origins of their switching behavior using scanning thermal microscopy (SThM). We observe localized heating due to the formation of a conductive plug, which is correlated with electro-thermal simulations, providing the first thermal insights into the operation of such RRAM devices. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442153 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
resistive memory devices,hexagonal boron nitride,switching layers,resistive random access memory devices,switching mechanisms,electro-thermal simulations,RRAM devices,TMD,scanning thermal microscopy,transition metal dichalcogenides,SThM,MoTe2,BN | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Isha M. Datye | 1 | 0 | 0.34 |
| Miguel Muñoz Rojo | 2 | 0 | 0.68 |
| Eilam Yalon | 3 | 0 | 1.69 |
| Michal J. Mleczko | 4 | 0 | 0.68 |
| Eric Pop | 5 | 50 | 12.07 |