Name
Abstract | ||
|---|---|---|
Phase change memory (PCM) is an important storage-class memory technology and a promising candidate for neuromorphic applications. PCM is based on the reversible resistance change in chalcogenide glasses, like Ge2Sb
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Te5 (GST), which can be induced with Joule heating pulses. However, PCM often suffers from large programming energy during the reset (amorphization) process which requires heating the chalcogenide above its melting temperature (Tm ~ 600
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C). Recently, significant reductions in reset energy were achieved by scaling down cell dimensions thanks to the non-filamentary nature of PCM [1]. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8443164 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
energy-efficient phase change memory programming,nanosecond pulses,neuromorphic applications,reversible resistance change,chalcogenide glasses,Joule heating pulses,reset process,reset energy | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Eilam Yalon | 1 | 0 | 1.69 |
| Kye Okabe | 2 | 4 | 1.13 |
| Christopher M. Neumann | 3 | 0 | 0.34 |
| H.-S. Philip Wong | 4 | 645 | 106.40 |
| Eric Pop | 5 | 50 | 12.07 |