Title
Direct E-Field Measurement and Imaging of Oscillations Within Power Amplifiers
Abstract
We present, for the first time, a measurement system that is capable of directly detecting and identifying the physical location of an oscillation within radio frequency (RF) and microwave power amplifiers (PAs). The method uses a combined external electrooptic, nonlinear vector network analyzer, and vector load-pull measurement system, which allows the measurement of cross-frequency phase-coherent multiharmonic vector electric fields (E-fields) above the transistor with an 8-μm spatial resolution and 20 MHz-40 GHz bandwidth. Raster scans above the amplifier allow the time-domain E-fields to be animated and superimposed on top of the amplifier image, enabling immediate identification of any oscillations by direct inspection. The method is first demonstrated on a low-power PA composed of two parallel 0.1-W pseudomorphic high electron mobility transistors that is intentionally designed to have an odd-mode oscillation. The applicability of the method is further demonstrated by measuring and animating in-package parametric odd-mode oscillations within a 260-W laterally diffused metal-oxide-semiconductor transistor operating at 2.2 GHz under pulsed RF conditions with 10-μs pulses and 10% duty cycle. The measurement and identification technique are applicable to all semiconductor devices as the external E-field is noninvasively measured above the amplifier.
Year
DOI
Venue
2019
10.1109/tim.2018.2869407
IEEE Transactions on Instrumentation and Measurement
Field
DocType
Citations 
Network analyzer (electrical),Oscillation,Electric field,Duty cycle,Optics,Radio frequency,Electronic engineering,Transistor,Semiconductor device,Mathematics,Amplifier
Journal
0
PageRank 
References 
Authors
0.34
0
3
Name
Order
Citations
PageRank
Jonas Urbonas100.34
Kevin Kim203.04
Peter H. Aaen301.01