Name
Abstract | ||
|---|---|---|
The fabrication of a single pixel sensor, which is a fundamental element device for the fabrication of an array-type pixel sensor, requires an integration technique of a photodetector and transistor on a wafer. In conventional GaN-based ultraviolet (UV) imaging devices, a hybrid-type integration process is typically utilized, which involves a backside substrate etching and a wafer-to-wafer bonding process. In this work, we developed a GaN-based UV passive pixel sensor (PPS) by integrating a GaN metal-semiconductor-metal (MSM) UV photodetector and a Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET) on an epitaxially grown GaN layer on silicon substrate. An MSM-type UV sensor had a low dark current density of 3.3 x 10(-7) A/cm(2) and a high UV/visible rejection ratio of 10(3). The GaN SB-MOSFET showed a normally-off operation and exhibited a maximum drain current of 0.5 mA/mm and a maximum transconductance of 30 S/mm with a threshold voltage of 4.5 V. The UV PPS showed good UV response and a high dark-to-photo contrast ratio of 10(3) under irradiation of 365-nm UV. This integration technique will provide one possible way for a monolithic integration of the GaN-based optoelectronic devices. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.3390/s19051051 | SENSORS |
Keywords | Field | DocType |
gallium nitride (GaN),ultraviolet (UV),photodetector,Schottky-barrier (SB) metal-oxide-semiconductor field-effect transistor (MOSFET),passive pixel sensor (PPS),UV image sensor | Wafer,Analytical chemistry,Photodetector,Dark current,Transconductance,Engineering,Transistor,MOSFET,Threshold voltage,Optoelectronics,Ultraviolet | Journal |
Volume | Issue | ISSN |
19 | 5.0 | 1424-8220 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chang-Ju Lee | 1 | 1 | 1.30 |
| Chul-ho Won | 2 | 42 | 13.41 |
| Junghee Lee | 3 | 226 | 27.26 |
| Sung-Ho Hahm | 4 | 1 | 0.96 |
| Hongsik Park | 5 | 1 | 1.30 |