Title | ||
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15.8 A 4.5V/ns Active Slew-Rate-Controlling Gate Driver with Robust Discrete-Time Feedback Technique for 600V Superjunction MOSFETs |
Abstract | ||
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Active gate control is an emerging technique to minimize the switching loss of high-power converters facing noise-suppression challenges. In a conventional gate-driver design, a fixed value of gate resistance is chosen by the converter designers so that the slew rate (SR) of the drain voltage V
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, namely $dV_{d}/$dt, does not exceed noise-aware design guidelines in each application and use case. Minimizing the gate resistance leads to high $dV_{d}/$dt and the reduction in switching loss while shortening the turn-on delay for the overall converter performance. However, the impact is limited because of uncontrollable $dV_{d}/$dt drift caused by load-current, temperature, and $\mathrm {V}_{th}$ variations of the power transistors. Thus, in practice there is significant room for further loss and turn-on-delay minimization for the active gate control that adaptively modulates gate driving ability within every switching cycle. |
Year | DOI | Venue |
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2019 | 10.1109/ISSCC.2019.8662534 | 2019 IEEE International Solid- State Circuits Conference - (ISSCC) |
DocType | ISBN | Citations |
Conference | 978-1-5386-8531-0 | 1 |
PageRank | References | Authors |
0.63 | 0 | 3 |
Name | Order | Citations | PageRank |
---|---|---|---|
shusuke kawai | 1 | 8 | 2.75 |
Takeshi Ueno | 2 | 1 | 0.96 |
Kohei Onizuka | 3 | 12 | 3.64 |