Paper Info
Title
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory.
Abstract
This paper presents the Co-60 irradiation results for a 16Mb Magneto-resistive Random Access Memory (MRAM). Read bit errors were observed during Total Ionizing Dose (TID) testing. We have investigated their physical mechanisms and proposed a resistance drift model of the access transistor in 1M1T (a magnetic tunnel junction and a transistor) storage structure to understand the phenomenon. Read operations have been simulated by HSPICE simulator with the magnetic tunnel junction (MTJ) compact model. The simulation results reveal that the resistance shift of access transistors has a great impact on read bit errors in MRAM. The experimental data and analysis in this work can be used to harden MRAM designs targeting space-borne applications.
Year
DOI
Venue
2016
10.1016/j.microrel.2016.10.013
Microelectronics Reliability
Keywords
Field
DocType
MRAM,Total ionizing dose effects,Read bit errors,SPICE model,Radiation-harden
Magneto,Absorbed dose,Computer science,Electronic engineering,Magnetoresistive random-access memory,Tunnel magnetoresistance,Transistor,Electrical engineering,Random access,Resistive random-access memory,Bit error rate
Journal
Volume
ISSN
Citations 
67
0026-2714
0
PageRank 
References 
Authors
0.34
0
7
Name
Order
Citations
PageRank
Haohao Zhang100.34
J. -S. Bi233.10
H. Wang38415.66
Hongyang Hu400.34
Jin Li500.34
Lanlong Ji601.01
Ming Liu727650.00