Paper Info
Title
Recovery-aware proactive TSV repair for electromigration in 3D ICs.
Abstract
Electromigration (EM) becomes a major reliability concern in three-dimensional integrated-circuits (3D ICs). To mitigate this problem, a typical solution is to use TSV redundancy in a reactive manner, maintaining the operability of a 3D chip in the presence of EM failures by detecting and replacing faulty TSVs with spares. In this work, we explore an alternative, more preferred approach to enhance the EM-related lifetime reliability of TSV grid, in which redundancy is used proactively to allow non-faulty TSVs to be temporarily deactivated. In this way, EM wear-out can be reversed by exploiting its recovery property. Applied to 3D benchmark designs, the recovery-aware proactive repair approach increases EM-related lifetime reliability (measured in mean-time-to-failure) of the entire TSV grid by up to 12X relative to the conventional reactive method, with less area overhead.
Year
DOI
Venue
2017
10.23919/DATE.2017.7926986
DATE
Keywords
Field
DocType
recovery-aware proactive TSV repair,electromigration,3D IC,three-dimensional integrated-circuits,TSV redundancy,3D chip,EM failures,EM-related lifetime reliability,TSV grid,nonfaulty TSV detection,EM wear-out,3D benchmark design,recovery-aware proactive repair approach,mean-time-to-failure,area overhead
Computer science,Operability,Redundancy (engineering),Three-dimensional integrated circuit,Electromigration,Maintenance engineering,Reliability engineering,Grid
Conference
ISSN
ISBN
Citations 
1530-1591
978-1-5090-5826-6
0
PageRank 
References 
Authors
0.34
16
4
Name
Order
Citations
PageRank
Shengcheng Wang1134.29
Hengyang Zhao293.95
Xiang-Dong Tan317730.26
Mehdi B. Tahoori41537163.44