Name
Abstract | ||
|---|---|---|
In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the I-ds scalable model by introducing a simple correction factor. The established model can predict the I-V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer measurement is used to further validate the proposed model. Finally, the proposed scalable model is used to design a broadband high efficiency continuous class-E power amplifier (PA). Experimental results show that this class E PA is realized from 2.5-3.5 GHz with drain efficiency of 60%-70%, over 8.2 dB gain and over 35.2 dBm output by using a GaN HEMT with 1.25 mm total gate width. The results show that the proposed model is useful for high efficiency amplifier design. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1587/elex.14.20170806 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
GaN HEMT, large signal model, scalable model, class E power amplifier | Thermal,Computer science,Electronic engineering,Large-signal model,High-electron-mobility transistor,RF power amplifier,Scalability,Amplifier | Journal |
Volume | Issue | ISSN |
14 | 18 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xiansuo Liu | 1 | 1 | 0.82 |
| Chuicai Rong | 2 | 1 | 0.82 |
| Yuehang Xu | 3 | 2 | 5.84 |
| bo yan | 4 | 35 | 15.11 |
| Ruimin Xu | 5 | 4 | 9.05 |
| Tiedi Zhang | 6 | 3 | 5.31 |