Name
Abstract | ||
|---|---|---|
It is widely known that ethylene treatment is an effective method for postharvest handling of fruit. In this study, we employed a field effect transistor based on silicon carbide (SiC-FET) gas sensor for detecting ethylene produced from fruits. The characteristics of the sensor was evaluated regarding several parameters. The selectivity and sensitivity of SiC-FET sensors can be controlled toward a few target gases by changing the operating temperature, gate material and material structure. We studied an iridium and a platinum gated SiC-FET sensors and characterized the sensing of these for different ethylene concentrations as the target gas at different operating temperatures. The results showed that the iridium gated SiC-FET sensor has high sensitivity to ethylene, and the highest response is achieved at 200 degrees C. |
Year | Venue | Keywords |
|---|---|---|
2017 | IEEE Global Conference on Consumer Electronics | field effect transistor,gas sensor,ethylene,postharvest fruit ripening,crop storage,food quality |
Field | DocType | ISSN |
Ethylene,Operating temperature,Field-effect transistor,Silicon carbide,Platinum,Chemical engineering,Postharvest,Ripening,Iridium,Materials science | Conference | 2378-8143 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yuki Hasegawa | 1 | 0 | 1.69 |
| Anita Lloyd Spetz | 2 | 4 | 1.84 |
| Donatella Puglisi | 3 | 0 | 1.01 |