Title
Session 11 overview: SRAM: Memory subcommittee
Abstract
SRAM continues to be the critical technology enabler for a wide range of applications from low-power to high-performance computing. This session showcases the leading-edge SRAM developments from the semiconductor industry. Intel presents the smallest SRAM bitcell for 10nm technology, with design assist techniques to enable low VMIN operation. Samsung presents the smallest bitcell for 7nm technology and shows a double-write driver technique to further improve VMIN. TSMC demonstrates a 7nm 5GHz L1 cache for high-performance computing.
Year
DOI
Venue
2018
10.1109/ISSCC.2018.8310250
2018 IEEE International Solid - State Circuits Conference - (ISSCC)
Field
DocType
ISBN
CPU cache,Computer science,Static random-access memory,Electrical engineering,Semiconductor industry,Embedded system
Conference
978-1-5386-2227-8
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Jonathan Yung-Cheng Chang116625.48
Chun Shiah211.71
Leland Chang352.12