Paper Info
Title
Modeling and Performance Analysis of Shielded Differential Annular Through-Silicon Via (SD-ATSV) for 3-D ICs.
Abstract
A shielded-differential annular through-silicon via (SD-ATSV) is proposed and investigated. The equivalent circuit model is developed with the influence of the electrically floating silicon substrate taken into account. By virtue of the circuit model, the frequency- and time-domain electrical characterizations of the SD-ATSV are conducted. Furthermore, the thermo-mechanical stress of the SD-ATSV is captured and compared with that of the shielded-differential cylindrical through-silicon via. It is demonstrated that by utilizing the SD-ATSV, the keep-out zone can be reduced without performance degradation.
Year
DOI
Venue
2018
10.1109/ACCESS.2018.2846751
IEEE ACCESS
Keywords
Field
DocType
Shielded differential annular through-silicon via (SD-ATSV),MOS capacitance,floating silicon substrate,thermal stress,keep-out zone (KOZ)
Shielded cable,Computer science,Cylinder,Electric potential,Degradation (geology),Through-silicon via,Optoelectronics,Equivalent circuit,Silicon,Distributed computing
Journal
Volume
ISSN
Citations 
6
2169-3536
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
Kai Fu100.68
Wen-Sheng Zhao203.72
Gaofeng Wang32410.09
madhavan swaminathan410824.63