Paper Info
Title
4.5-/4.9-Ghz-Band Selective High-Efficiency Gan Hemt Power Amplifier By Characteristic Impedance Switching
Abstract
A 4.5-/4.9-GHz band-selective GaN HEMT high-efficiency power amplifier has been designed and evaluated for next-generation wireless communication systems. An optimum termination impedance for each high-efficiency operation band was changed by using PIN diodes inserted into a harmonic treatment circuit at the output side. In order to minimize the influence of the insertion loss of the PIN diodes, an additional line is arranged in parallel with the open-ended stub used for second harmonic treatment, and the line and stub are connected with the PIN diodes to change the effective characteristic impedance. The fabricated GaN HEMT amplifier achieved a maximum power-added efficiency of 57% and 66% and a maximum drain efficiency of 62% and 70% at 4.6 and 5.0 GHz, respectively, with a saturated output power of 38 dBm, for each switched condition.
Year
DOI
Venue
2018
10.1587/transele.E101.C.751
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
power amplifier, high efficiency, band selective, GaN HEMT, PIN diode
Optics,Characteristic impedance,Engineering,High-electron-mobility transistor,Optoelectronics,Amplifier
Journal
Volume
Issue
ISSN
E101C
10
1745-1353
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Kazuki Mashimo100.34
Ryo Ishikawa287.74
Kazuhiko Honjo31211.55