Paper Info
Title
On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.
Abstract
In this paper, we investigate the trapping effects, of iron doped AlGaN/GaN HEMTs, before and after on-wafer 24 hour RF stress test. First, we study the trap centers responsible of the current collapse at different on-state bias and temperature conditions. Second, we investigate 24 hour RF stress effect on the trapping kinetics.
Year
DOI
Venue
2018
10.1016/j.microrel.2018.07.122
Microelectronics Reliability
Keywords
Field
DocType
RF stress,GaN,HEMT,Trap,Current collapse
Wafer,Doping,Voltage,Electronic engineering,Degradation (geology),Trapping,Engineering,High-electron-mobility transistor,Optoelectronics,Amplitude,Kinetics
Journal
Volume
ISSN
Citations 
88
0026-2714
0
PageRank 
References 
Authors
0.34
0
17
Name
Order
Citations
PageRank
Mehdi Rzin100.34
Alessandro Chini24313.88
Carlo De Santi398.64
Matteo Meneghini44530.20
A. Hugger500.34
M. Hollmer600.34
H. Stieglauer700.34
M. Madel800.34
J. Splettstößer900.34
D. Sommer1000.34
J. Grünenpütt1131.27
K. Beilenhoff1200.34
Hervé Blanck1332.22
J.-T. Chen1400.34
O. Kordina1500.34
Gaudenzio Meneghesso166738.27
Enrico Zanoni176037.05