Name
Title | ||
|---|---|---|
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers |
Abstract | ||
|---|---|---|
A novel three-dimensional hole gas (3DHG) enhancement-mode (E-mode) heterostructure fieldeffect transistor (HFET) is proposed and investigated. It features back-to-back graded AlGaN (BGA) barrier layers consisting of a positive-graded AlGaN layer and a negative-graded AlGaN layer, which form polarization gradient and subsequently induce the three-dimensional electron gas (3DEG) and 3DHG in the positiveand negative-graded AlGaN layers, respectively. The source and drain are located at the same side of the metal-insulator-semiconductor (MIS) trench gate, and the source is in contact with the HfO2 gate insulator. First, the on-state current is significantly improved owing to the high-density 3DEG in the positive-graded AlGaN. Next, the vertical conductive channel between the source and 3DEG is blocked by the 3DHG, thereby realizing the E-mode. The threshold voltage (Vth) can be modulated by a partial doping conductive channel. Subsequently, a high breakdown voltage (BV) is obtained, because the polarization junction formed by the polarization charges assists in depleting the drift region in the off-state. Next, the BGA-HFET is smaller than the conventional HFET (Con-HFET) owing to the special location of the source. The BV of the proposed HFET sharply increases to 919 V from 39 V of the Con-HFET with the same gate-drain spacing, and the saturation drain current is increased by 103.5%. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1007/s11432-018-9503-9 | Science China Information Sciences |
Keywords | Field | DocType |
graded AlGaN, 3DHG-3DEG, large on-state current, high voltage, enhancement mode | Control theory,Doping,Electrical conductor,Polarization (waves),Breakdown voltage,High voltage,Transistor,Optoelectronics,Heterojunction,Threshold voltage,Mathematics | Journal |
Volume | Issue | ISSN |
62 | 6 | 1869-1919 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Fu Peng | 1 | 1 | 0.72 |
| Chao Yang | 2 | 14 | 3.12 |
| Siyu Deng | 3 | 0 | 0.34 |
| Dongya Ouyang | 4 | 0 | 0.34 |
| Bo Zhang | 5 | 17 | 6.30 |
| Jie Wei | 6 | 2 | 1.15 |
| Xiaorong Luo | 7 | 1 | 0.72 |