Title
A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology
Abstract
This paper presents the design and implementation of a 21-26.5 GHz broadband, two stages CMOS power amplifier (PA) for quasi-millimeter wave band wireless communication systems. The proposed PA is designed using staggered tuning method [1], which is employed for the first time in quasi-millimeter wave band. Moreover, source and load-pull simulation, in addition to, impedance analysis are employed to optimize the input, output, and inter-stage impedance matching circuits for maximum power added efficiency (PAE) and better linearity. The measurement results on a chip fabricated using 0.18 mu m CMOS technology shows a power gain of 10.2 +/- 0.8 dB, a maximum PAE and output gain compression point (P-Out1dB) of 10.5 dBm and 18 %, respectively, at 24 GHz while consuming 42 mW only. In addition, the PA achieved excellent low measured group delay variations of 75 +/- 22 ps.
Year
DOI
Venue
2016
10.1109/MWSCAS.2016.7870065
Midwest Symposium on Circuits and Systems Conference Proceedings
Keywords
Field
DocType
Power Amplifier (PA),Power Added Efficiency (PAE)
Power gain,Computer science,Linearity,Impedance matching,Electronic engineering,CMOS,Staggered tuning,RF power amplifier,Gain compression,Amplifier
Conference
ISSN
Citations 
PageRank 
1548-3746
0
0.34
References 
Authors
0
6
Name
Order
Citations
PageRank
Mosalam, H.121.73
Allam, A.227.12
Adel Abdelrahman365.14
Takana Kaho4115.35
Hongting Jia524.32
R. K. Pokharel698.47