Name
Title | ||
|---|---|---|
Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τ<inf>c</inf> for Large Power Bandwidth Power Amplifiers |
Abstract | ||
|---|---|---|
InP double-heterojunction bipolar transistors (DHBTs) have demonstrated power gain cutoff frequencies (f
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub>
) above 1THz under low collector voltage due to electron velocity overshoot in the InP drift collector [1] [2]. Under higher collector voltage, however, a quick onset of Γ-L scattering limits the average electron velocity to the saturation velocity (Fig. 1(a)-(c)), leading to a Johnson's figure-of-merit (JFOM) second to GaN HEMTs and a limited transistor power bandwidth for InP DHBTs [3]. Here we propose a velocity-engineered device structure called the segmented-collector DHBT (SC-DHBT) that incorporates p-type scattering layers within the drift collector to reduce the electron kinetic energy and force a greater electron distribution into the low effective mass Γ- valley for extended velocity overshoot (Fig. 3(a)). Transport simulations show the collector transit time τc is reduced from 1.23ps in the reference design to 0.90ps in a double scatterer design at V
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cb</sub>
=5V, J
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub>
= 1mA/um
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
. The proposed SC-DHBT design is suited for large power bandwidth power amplifiers. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442142 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
reduced collector transit time,InP double-heterojunction bipolar transistors,electron velocity overshoot,segmented-collector DHBT,p-type scattering layers,electron kinetic energy,SC-DHBT design,large power bandwidth power amplifiers,InP segmented-collector DHBT,voltage 5.0 V,InP | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yihao Fang | 1 | 0 | 0.68 |
| Jonathan P. Sculley | 2 | 0 | 1.01 |
| M. Urteaga | 3 | 16 | 7.43 |
| Andy D Carter | 4 | 0 | 1.01 |
| Paul D. Yoder | 5 | 0 | 1.01 |
| Mark J. W. Rodwell | 6 | 223 | 29.72 |