Title
AC and DC Quantum Hall Measurements in GaAs-Based Devices at Temperatures Up To 4.2 K
Abstract
In this paper, we describe ac and dc quantum Hall effect measurements at temperatures above 1.5 K, which is beyond the commonly used value for high precision measurements of the quantum Hall resistance (QHR). It is shown that GaAs devices with high electron density of about 5 × 1011 cm2 can be used as reliable dc resistance quantum standards with quantization of RH(2) value with accuracy within a ...
Year
DOI
Venue
2019
10.1109/TIM.2018.2882216
IEEE Transactions on Instrumentation and Measurement
Keywords
Field
DocType
Temperature measurement,Current measurement,Bridge circuits,Resistance,Standards,Probes,Sockets
Quantum,Electron density,System of measurement,Coaxial,Electronic engineering,Electrical impedance,Dc resistance,Quantization (signal processing),Optoelectronics,Quantum Hall effect,Mathematics
Journal
Volume
Issue
ISSN
68
6
0018-9456
Citations 
PageRank 
References 
1
0.39
0
Authors
3
Name
Order
Citations
PageRank
Jan Kucera112.08
Pavel Svoboda210.39
K. Pierz3103.69