Title
Patterned Al-Ge Wafer Bonding for Reducing In-Process Side Leakage of Eutectic
Abstract
This paper proposes a new Al-Ge eutectic bonding method for MEMS hermetical packaging based on network-like patterning. This kind of patterning provides inner space for eutectic metals to fill inside when Al and Ge turn into liquid phase at their eutectic melting point during bonding process. This is a very promising alternative approach to eutectic bonding that improves the reliability of the bonding procedure with a low requirement for temperature and pressure control. Preliminary experimental results shows an acceptable reduction of the eutectic side leakage.
Year
DOI
Venue
2018
10.1109/NEMS.2018.8556904
2018 IEEE 13th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Keywords
DocType
ISSN
Al-Ge eutectic bonding method,MEMS hermetical packaging,network-like patterning,eutectic metals,liquid phase,eutectic melting point,bonding process,patterned Al-Ge wafer bonding,in-process side leakage,temperature control,pressure control,AlGe
Conference
2474-3747
ISBN
Citations 
PageRank 
978-1-5386-5274-9
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Kai Gao17839.46
Qiyuan Zhang200.34
Weiguo Su300.68
Wei Zhang401.01