Title
A 30 Gb/s High-Swing, Open-Collector Modulator Driver in 250 nm SiGe BiCMOS
Abstract
This paper presents a modulator driver realized as a breakdown voltage doubler which can provide a high output swing of 7.6 Vpp, diff for load impedances as low as 30 Omega, thus overcoming the limitation imposed by the collector-emitter breakdown voltage. The open-collector design gives an important degree of freedom regarding the modulator load to be driven, while significantly reducing the circuit's power consumption. The driver is capable of running at 30 Gb/s while dissipating 1 W of DC power. Thanks to the inductorless design, the active area occupied by the circuit is only 0.28 mm x 0.23 mm. The driver was realized in a 250 nm SiGe BiCMOS technology.
Year
DOI
Venue
2018
10.1109/mwscas.2018.8624057
Midwest Symposium on Circuits and Systems Conference Proceedings
Field
DocType
ISSN
BiCMOS,Open collector,Computer science,Bicmos technology,Electronic engineering,Electrical impedance,Modulation,Breakdown voltage,Power consumption,Swing
Conference
1548-3746
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Alexandru Giuglea101.01
Guido Belfiore283.48
Mahdi M. Khafaji351.95
Ronny Henker4164.93
Frank Ellinger57940.01