Name
Abstract | ||
|---|---|---|
In this paper, a broadband closed-form expression for the parasitic inductance of Through-X Vias (TXVs) with a frequency up to 100 GHz is proposed. The rigorous formulas related to the geometrical parameters are derived considering the proximity effect and the skin effect. The proposed model can accurately reflect the change in inductance caused by magnetic flux variation at high frequency. The inductance model is verified by comparing with the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS) in whole frequency range considered. The proposed model and HFSS results show accordance with each other over large radius range, with a maximum error of 4.6%. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1016/j.mejo.2019.04.010 | Microelectronics Journal |
Keywords | Field | DocType |
Three-dimensional integrated circuits (3-D ICs),Through X vias (TXVs),Inductance modeling | Parasitic element,Proximity effect (audio),Skin effect,Inductance,HFSS,Electronic engineering,Broadband,Acoustics,Magnetic flux,Engineering,Interconnection | Journal |
Volume | ISSN | Citations |
88 | 0026-2692 | 0 |
PageRank | References | Authors |
0.34 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yang Liu | 1 | 13 | 6.37 |
| Zhangming Zhu | 2 | 294 | 82.36 |
| Xiaoxian Liu | 3 | 4 | 2.45 |
| Li-Xin Guo | 4 | 12 | 16.42 |
| Yin-Tang Yang | 5 | 334 | 92.74 |