Title
A 212-GHz Differential VCO with 5.3% dc-to-RF Efficiency in 65-nm CMOS Technology
Abstract
This paper presents a 212-GHz fundamental VCO with a Π-embedding network with high dc-to-RF efficiency. Particle swarm optimization method is utilized to find the optimal values of elements of the lossy embedding network. Fabricated in 65-nm bulk CMOS, the VCO achieves 0.6-mW peak output power per transistor at 1-V power supply and the peak dc-to-RF efficiency of 5.3%. The measured phase noise is -92.5dBc/Hz and -113.9dBc/Hz at 1MHz and 10MHz offset, respectively. Bulk voltage is used as the tuning mechanism. The measured tuning rang is 212.2GHz to 208.8GHz when the bulk voltage is changed from 0V to 0.8V.
Year
DOI
Venue
2019
10.1109/RWS.2019.8714536
2019 IEEE Radio and Wireless Symposium (RWS)
Keywords
Field
DocType
fundamental oscillator,VCO,mm-wave,terahertz,CMOS
CMOS,Voltage-controlled oscillator,Optoelectronics,Materials science
Conference
ISSN
ISBN
Citations 
2164-2958
978-1-5386-5945-8
0
PageRank 
References 
Authors
0.34
7
4
Name
Order
Citations
PageRank
Hao Wang140.77
Jingjun Chen240.77
James T. S. Do341.11
Xiaoguang Liu484.27