Title
Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications
Abstract
OxRRAM is being considered as synapse in neuromorphic systems in multiple ways. For analog neural network weight storage, OxRRAM resistance variability poses a significant challenge at low currents. However, alternative ‘cortical’ learning algorithms can tolerate or even exploit the stochastic behavior of the device at low power. This paper aims at providing an accurate kinetic description of the low voltage transients in OxRRAM. To model the relevant stochastic effects, we extend the hourglass model with a power-dependent filament shuffling rate and a normally distributed activation energy. Including these elements improves the original hourglass model and allows for resistance distribution simulations at low voltage as well as reproducing resistance-time transient RESET traces with inclusion of the intrinsic stochastic variability.
Year
DOI
Venue
2019
10.1109/IRPS.2019.8720555
2019 IEEE International Reliability Physics Symposium (IRPS)
Keywords
Field
DocType
component,OxRRAM,low voltage gradual RESET,neuromorphic,stochastic learning,Hourglass model
Neuromorphic engineering,Electronic engineering,Low voltage,Engineering,Kinetic energy
Conference
ISSN
ISBN
Citations 
1541-7026
978-1-5386-9504-3
0
PageRank 
References 
Authors
0.34
0
7
Name
Order
Citations
PageRank
J. Doevenspeck100.68
Robin Degraeve273.20
A. Fantini300.68
Peter Debacker4329.04
D. Verkest537237.99
R. Lauwereins618019.03
Wim Dehaene7874116.42