Name
Title | ||
|---|---|---|
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling |
Abstract | ||
|---|---|---|
A new gate pattern is proposed to minimize test time while maximizing charge capture and emission into/from oxide defects for efficient and accurate BTI modeling. In conjunction with the imec/T.U. Vienna BTI simulation framework “Comphy”, which encapsulates the microscopic behavior of individual defects, the Accelerated Capture and Emission (ACE) gate pattern streamlines a bottom-up approach for BTI evaluation from device to circuit level. The new pattern is systematically compared with the well-established Constant-Voltage-Stress (CVS) and Ramped-Voltage-Stress (RVS) methods and is found to show substantial improvements regarding both characterization and model-calibration efficiencies. The flow is further validated by showing good agreement between the direct projections of the model calibrated with the new pattern and experimental results of AC stress tests with various duty factors. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/IRPS.2019.8720541 | 2019 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | Field | DocType |
Bias temperature instability (BTI),life-time projection,MOSFET,non-radiative multi-phonon (NMP) model,reliability test and modeling | Process engineering,Electronic engineering,Engineering,ACE measurement | Conference |
ISSN | ISBN | Citations |
1541-7026 | 978-1-5386-9504-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 10 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zhicheng Wu | 1 | 0 | 0.34 |
| Jacopo Franco | 2 | 22 | 18.53 |
| Dieter Claes | 3 | 0 | 0.34 |
| g rzepa | 4 | 4 | 3.92 |
| Philippe Roussel | 5 | 35 | 8.04 |
| Nadine Collaert | 6 | 7 | 3.12 |
| Guido Groeseneken | 7 | 59 | 23.15 |
| Dimitri Linten | 8 | 29 | 13.72 |
| T. Grasser | 9 | 21 | 10.90 |
| Ben Kaczer | 10 | 49 | 12.50 |