Paper Info
Title
Tuning the Polarity of MoTe 2 FETs by Varying the Channel Thickness for Gas-Sensing Applications.
Abstract
In this study, electrical characteristics of MoTe2 field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe2 crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe2 channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe2 FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH3) sensing, which confirms the p- and n-type behavior of MoTe2 devices.
Year
DOI
Venue
2019
10.3390/s19112551
SENSORS
Keywords
DocType
Volume
2D materials,MoTe2,channel thickness effect,polarity switching
Journal
19
Issue
ISSN
Citations 
11.0
1424-8220
0
PageRank 
References 
Authors
0.34
0
5
Name
Order
Citations
PageRank
Asha Rani16010.49
Kyle DiCamillo200.34
Md Ashfaque Hossain Khan311.07
Makarand Paranjape400.34
Mona E. Zaghloul57319.65