Name
Abstract | ||
|---|---|---|
Memory hierarchy (Fig. 1) is one of the most essential component of any computing system. Non-volatile random access memory (NVRAM) technologies, such as PCRAM, STT-MRAM and ReRAM, have been massively produced in recent years and expected to bridge the bandwidth gap between DRAM (main memory) and NAND flash (storage). NVRAM also has been expected to provide the revolution of existing computing system in terms of density, performance and persistence management in the near future. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/VLSI-TSA.2019.8804706 | 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) |
Keywords | Field | DocType |
NVRAM technology,memory hierarchy,nonvolatile random access memory technologies,computing system | Dram,Memory hierarchy,Computer science,Non-volatile random-access memory,NAND gate,Electronic engineering,Bandwidth (signal processing),Computing systems,Embedded system,Random access,Resistive random-access memory | Conference |
ISSN | ISBN | Citations |
1930-8868 | 978-1-7281-0943-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Katsuhiko Hoya | 1 | 32 | 5.33 |
| Kosuke Hatsuda | 2 | 24 | 4.71 |
| kenji tsuchida | 3 | 4 | 4.03 |
| Yohji Watanabe | 4 | 24 | 4.03 |
| Yusuke Shirota | 5 | 0 | 1.35 |
| Tatsunori Kanai | 6 | 1 | 2.17 |