Paper Info
Title
A 31 pW-to-113 nW Hybrid BJT and CMOS Voltage Reference with 3.6% ±3σ-inaccuracy from 0<sup>○</sup>C to 170 <sup>○</sup>C for Low-Power High-Temperature IoT Systems
Abstract
This paper proposes a low-power voltage reference generating 736 mV from 0 °C to 170 °C for low-power high-temperature IoT sensing systems. Using subthreshold current, a BJT diode develops a process-insensitive complementary-to-absolute-temperature voltage, and stacked CMOS transistors compensate the temperature sensitive by adding a proportional-to-absolute-temperature voltage. To maintain a reference voltage at high temperature, the circuit is designed considering pwell-to-deep nwell diode leakage. 76 samples from 3 different wafers, fabricated in a 180 nm process, show a ±3σ inaccuracy of 3.6% from 0 °C to 170 °C without any trimming. It consumes 31 pW at 27 °C and 113 nW at 170 °C from 0.9 V supply.
Year
DOI
Venue
2019
10.23919/VLSIC.2019.8778113
2019 Symposium on VLSI Circuits
Keywords
Field
DocType
CMOS voltage reference,low-power high-temperature IoT systems,low-power voltage reference,low-power high-temperature IoT sensing systems,BJT diode,process-insensitive complementary-to-absolute-temperature voltage,proportional-to-absolute-temperature voltage,circuit design,subthreshold current,p well-to-deep nwell diode leakage,hybrid BJT,temperature sensitivity compensation,stacked CMOS transistors,voltage 0.9 V,temperature 0.0 degC to 170.0 degC,voltage 736.0 mV,size 180.0 nm,power 31 nW to 113 nW
Leakage (electronics),Computer science,Voltage,Voltage reference,Electronic engineering,CMOS,Subthreshold conduction,Bipolar junction transistor,MOSFET,Transistor,Optoelectronics
Conference
ISSN
ISBN
Citations 
2158-5601
978-1-7281-0914-5
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
Inhee Lee127533.89
David Blaauw28916823.47