Title
Performance Parameters Modeling and Simulation of Single-Photon Avalanche Diodes for Space LIDAR Applications
Abstract
In this paper, we present a model to simulate accurately two main performance parameters of Single-Photon Avalanche Diodes (SPAD) in Complementary Metal-Oxide Semiconductor (CMOS) technology, the Photon-Detection-Probabilty (PDP) and the Dark-Count-Rate (DCR). The model development has been driven by the necessity to comply with the specifications of SPAD used for future space LIDAR applications. To evaluate these statistical parameters, the model is based on a combination of measurements to acquire data related to trap population, Technology CAD (TCAD) simulations and a Matlab routine.
Year
DOI
Venue
2019
10.1109/PRIME.2019.8787734
2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)
Keywords
Field
DocType
Single Photon Avalanche Diode (SPAD),Complementary Metal-Oxide Semiconductor (CMOS),Modeling and simulations,Dark Count Rate (DCR),Photon Detection Probability Technology CAD (TCAD),Matlab
Population,MATLAB,Modeling and simulation,Semiconductor device modeling,Computer science,Diode,Electronic engineering,CMOS,Lidar,Technology CAD
Conference
ISBN
Citations 
PageRank 
978-1-7281-3550-2
0
0.34
References 
Authors
0
6