Title
THz Response of a JLFET Detector - Interpretation by a Resistive Mixing Theory
Abstract
Two models of the THz electromagnetic radiation detection using field-effect devices are presented and briefly discussed with regard to junctionless FETs as THz detectors. Due to inconsistency between a plasmonic theory and JLFET characteristics, a resistive mixing approach has been considered in a more detail and adopted for interpretation of the JLFET THz photoresponse. Fabrication of the test JLFETs and their electrical characterization are described. The detector channel conductance model and the photoresponse model have been developed in accordance with the resistive mixing theory. The modeling results are verified based on the experimental results of the THz detection using test devices.
Year
DOI
Venue
2019
10.23919/MIXDES.2019.8787049
2019 MIXDES - 26th International Conference "Mixed Design of Integrated Circuits and Systems"
Keywords
Field
DocType
JLFET,THz detection,resistive mixing,hydrodynamic model,electrical characterization
Resistive touchscreen,Computer science,Electronic engineering,Terahertz radiation,Electromagnetic radiation,Conductance,Integrated circuit,Detector,Optoelectronics,Fabrication,Plasmon
Conference
ISBN
Citations 
PageRank 
978-1-7281-3408-6
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
Daniel Tomaszewski100.68
Michał Zaborowski201.35
J. Marczewski321.84