Name
Abstract | ||
|---|---|---|
A resistive random access memory device based on HfO
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with outstanding nonvolatility is fabricated. A dynamic Verilog-A model obeying the electrochemical metallization conductive filament mechanism is demonstrated. The fluctuation of conductive filament growth is added to this model, and the model is verified by DC voltage scanning. The simulation and experimental data are compared using data processing software. Experimental results verify the good electrical characteristics of the RRAM device. Modeling of the fluctuations of RRAM devices provides guiding significance to the design of peripheral circuits. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/SMACD.2019.8795257 | 2019 16th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) |
Keywords | Field | DocType |
RRAM,Verilog-A model,Fluctuation | Data processing,Conductive filament,Experimental data,Voltage,Software,Electronic circuit,Optoelectronics,Materials science,Resistive random-access memory | Conference |
ISSN | ISBN | Citations |
2575-4874 | 978-1-7281-1202-2 | 0 |
PageRank | References | Authors |
0.34 | 2 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Feng Zhang | 1 | 4 | 1.10 |
| Linan Li | 2 | 0 | 0.68 |
| Qiang Huo | 3 | 0 | 0.68 |
| Cong Fang | 4 | 17 | 7.14 |
| Wenqiang Ba | 5 | 0 | 0.68 |