Title
InGaN as a Substrate for AC Photoelectrochemical Imaging.
Abstract
AC photoelectrochemical imaging at electrolyte-semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.
Year
DOI
Venue
2019
10.3390/s19204386
SENSORS
Keywords
Field
DocType
photoelectrochemistry,InGaN/GaN epilayer,cell imaging,light-activated electrochemistry,light-addressable potentiometric sensor
Photocurrent,Substrate (chemistry),Analytical chemistry,Linear sweep voltammetry,Diode,Light-addressable potentiometric sensor,Laser,Photoelectrochemistry,Thin film,Engineering,Optoelectronics
Journal
Volume
Issue
ISSN
19
20
1424-8220
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Bo Zhou100.34
Anirban Das200.34
Menno J Kappers300.34
Rachel A Oliver400.68
Colin J Humphreys500.34
Steffi Krause600.68