Abstract | ||
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AC photoelectrochemical imaging at electrolyte-semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns. |
Year | DOI | Venue |
---|---|---|
2019 | 10.3390/s19204386 | SENSORS |
Keywords | Field | DocType |
photoelectrochemistry,InGaN/GaN epilayer,cell imaging,light-activated electrochemistry,light-addressable potentiometric sensor | Photocurrent,Substrate (chemistry),Analytical chemistry,Linear sweep voltammetry,Diode,Light-addressable potentiometric sensor,Laser,Photoelectrochemistry,Thin film,Engineering,Optoelectronics | Journal |
Volume | Issue | ISSN |
19 | 20 | 1424-8220 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Bo Zhou | 1 | 0 | 0.34 |
Anirban Das | 2 | 0 | 0.34 |
Menno J Kappers | 3 | 0 | 0.34 |
Rachel A Oliver | 4 | 0 | 0.68 |
Colin J Humphreys | 5 | 0 | 0.34 |
Steffi Krause | 6 | 0 | 0.68 |