Name
Title | ||
|---|---|---|
High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer |
Abstract | ||
|---|---|---|
In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 10
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup>
, the lowest specific on-resistance of 0.95 mΩ·cm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ICICDT.2019.8790866 | 2019 International Conference on IC Design and Technology (ICICDT) |
Keywords | Field | DocType |
GaN,vertical structure,Schottky barrier diode | Gallium nitride,Substrate (chemistry),Electronic engineering,Schottky diode,Dislocation,Engineering,Optoelectronics,Silicon,Low density,Epitaxy | Conference |
ISSN | ISBN | Citations |
2381-3555 | 978-1-7281-1854-3 | 0 |
PageRank | References | Authors |
0.34 | 1 | 9 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yue Li | 1 | 6 | 10.29 |
| Ruiyuan Yin | 2 | 0 | 0.68 |
| Ming Tao | 3 | 0 | 0.34 |
| Yilong Hao | 4 | 12 | 4.49 |
| Cheng P. Wen | 5 | 0 | 1.01 |
| Maojun Wang | 6 | 0 | 1.01 |
| Jie Zhang | 7 | 214 | 30.67 |
| Xuelin Yang | 8 | 7 | 3.86 |
| Bo Shen | 9 | 0 | 1.01 |