Paper Info
Title
Prediction Of Dc-Ac Converter Efficiency Degradation Due To Device Aging Using A Compact Mosfet-Aging Model
Abstract
The degradation of a SiC-MOSFET-based DC-AC converter-circuit efficiency due to aging of the electrically active devices is investigated. The newly developed compact aging model HiSIM HSiC for high-voltage SiC-MOSFETs is used in the investigation. The model considers explicitly the carrier-trap-density increase in the solution of the Poisson equation. Measured converter characteristics during a 3-phase line-to-ground (3LG) fault is correctly reproduced by the model. It is verified that the MOSFETs experience additional stress due to the high biases occurring during the fault event, which translates to severe MOSFET aging. Simulation results predict a 0.5% reduction of converter efficiency due to a single 70ms-3LG, which is equivalent to a year of operation under normal conditions, where no additional stress is applied. With the developed compact model, prediction of the efficiency degradation of the converter circuit under prolonged stress, for which measurements are difficult to obtain and typically not available, is also feasible.
Year
DOI
Venue
2020
10.1587/transele.2019ECP5010
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
Field
DocType
compact model, DC-AC converter, device aging, efficiency, SiC-MOSFET
Electronic engineering,Degradation (geology),Dc ac converter,Engineering,MOSFET,Optoelectronics
Journal
Volume
Issue
ISSN
E103C
3
1745-1353
Citations 
PageRank 
References 
0
0.34
0
Authors
7
Name
Order
Citations
PageRank
Kenshiro Sato100.68
Dondee Navarro233.90
Shinya Sekizaki310.70
Yoshifumi Zoka423.86
Naoto Yorino546.46
Hans Jürgen Mattausch69632.93
Mitiko Miura-Mattausch71116.18