Title
A Monolithically Integrated Time-of-Flight Sensor with Large Area Silicon Avalanche Photodiode
Abstract
This paper presents a monolithically integrated CMOS receiver circuit for a pulsed time-of-flight (TOF) laser range-finder. The integrated CMOS Avalanche photodiode (APD) has an area of 300 x 300 mu m(2) and demonstrates a breakdown voltage of similar to 10V. The receiver front-end consists of a Transimpedance Amplifier (TIA), a Post-Amplifier (PA) with an offset cancellation network and a 50 Omega output buffer. The overall channel gain is 90dB Omega. The total area of the integrated circuit (IC) including bondpads and the APD is 1.48 mm(2) , and it consumes 132 mW power without the output buffer. To the best of the author's knowledge, this is the first reported fully integrated TOF CMOS receiver including the photodetector for an indoor pulsed based laser rangefinder.
Year
DOI
Venue
2019
10.1109/MWSCAS.2019.8884934
Midwest Symposium on Circuits and Systems Conference Proceedings
Keywords
Field
DocType
LiDAR,Time of Flight,CMOS APD,TIA
Avalanche photodiode,Computer science,Breakdown voltage,CMOS,Laser,Photodetector,Electronic engineering,Transimpedance amplifier,Integrated circuit,Optoelectronics,Silicon
Conference
ISSN
Citations 
PageRank 
1548-3746
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Asif Chowdhury101.35
Robert F. Karlicek200.68
Mona Mostafa Hella36814.51
Asil Chowdbury400.34