Paper Info
Title
Error Correction for Partially Stuck Memory Cells
Abstract
We present code constructions for masking u partially stuck memory cells with q levels and correcting additional random errors. The results are achieved by combining the methods for masking and error correction for stuck cells in [1] with the masking-only results for partially stuck cells in [2]. We present two constructions for masking u <; q cells and error correction: one is general and based on a generator matrix of a specific form. The second construction uses cyclic codes and allows to efficiently bound the error-correction capability using the BCH bound. Furthermore, we extend the results to masking u ≥ q cells. For u > 1 and q > 2, all new constructions require less redundancy for masking partially stuck cells than previous work on stuck cells, which in turn can result in higher code rates at the same masking and error correction capability.
Year
DOI
Venue
2019
10.1109/REDUNDANCY48165.2019.9003352
2019 XVI International Symposium "Problems of Redundancy in Information and Control Systems" (REDUNDANCY)
Keywords
DocType
ISSN
flash memories,phase change memories,(partially) stuck cells,error correction,defective cells,partitioned cyclic codes,BCH code
Conference
2377-6781
ISBN
Citations 
PageRank 
978-1-7281-1945-8
0
0.34
References 
Authors
2
3
Name
Order
Citations
PageRank
Kim Haider Al100.34
Sven Puchinger22514.73
Antonia Wachter-Zeh312933.65