Name
Abstract | ||
|---|---|---|
In this work, we compare different modeling approaches typically adopted to address current transport in polysilicon-channel MOSFETs. The analysis is focused on cylindrical gate-all-around devices with deca-nanometer dimension, due to the strong relevance recently gained by such devices in the field of 3-D NAND Flash memories. Pure drift-diffusion simulations under the effective medium approximation are compared to simulations accounting for polysilicon grains and grain boundaries, either keeping pure drift-diffusion transport or mixing intra-grain drift-diffusion with inter-grain thermionic emission. Some nonnegligible differences among the predictions of the three modeling approaches are highlighted and explained as a function of the device working regime, temperature and average size of the polysilicon grains. Results represent an important step towards a better understanding and a better extraction of the parameters of polysilicon-channel devices. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ESSDERC.2019.8901786 | ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) |
Field | DocType | ISSN |
Engineering physics,Thermionic emission,Cylinder,Communication channel,Electronic engineering,NAND gate,Grain boundary,Materials science | Conference | 1930-8876 |
ISBN | Citations | PageRank |
978-1-7281-1540-5 | 0 | 0.34 |
References | Authors | |
1 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Mannara | 1 | 0 | 0.34 |
| alessandro s spinelli | 2 | 24 | 5.13 |
| A. L. Lacaita | 3 | 151 | 18.16 |
| C. Monzio Compagnoni | 4 | 0 | 0.68 |