Abstract | ||
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We investigate the switching of a symmetric square and an elongated rectangular perpendicular free layer by spin-orbit torque with a magnetic field-free two-pulse scheme. The switching of the layer is achieved by utilizing the in-plane shape anisotropic magnetic field. For making the switching of a symmetric square layer deterministic, an in-plane stray field created in a part of the layer is used. The combination of the shape and stray fields accelerates the switching of the free layer significantly. A switching speedup factor of 3 to 5 has been obtained. The strategy also improves the robustness of the scheme allowing fast, sub-0.5 ns switching, less sensitive to the pulses’ properties. |
Year | DOI | Venue |
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2019 | 10.1109/ESSDERC.2019.8901780 | ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
Spin-Orbit MRAM,perpendicular magnetization,magnetic field-free switching,two-pulse switching scheme | Magnetic field,Perpendicular,Anisotropy,Torque,Magnetoresistive random-access memory,Electronic engineering,Robustness (computer science),Materials science,Demagnetizing field,Optoelectronics,Speedup | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-7281-1540-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Roberto Lacerda de Orio | 1 | 0 | 0.34 |
A. Makarov | 2 | 10 | 3.16 |
Siegfried Selberherr | 3 | 105 | 39.95 |
Wolfgang Gös | 4 | 0 | 0.34 |
Johannes Ender | 5 | 0 | 0.34 |
Simone Fiorentini | 6 | 0 | 0.34 |
Viktor Sverdlov | 7 | 12 | 4.70 |