Title
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM
Abstract
We investigate the switching of a symmetric square and an elongated rectangular perpendicular free layer by spin-orbit torque with a magnetic field-free two-pulse scheme. The switching of the layer is achieved by utilizing the in-plane shape anisotropic magnetic field. For making the switching of a symmetric square layer deterministic, an in-plane stray field created in a part of the layer is used. The combination of the shape and stray fields accelerates the switching of the free layer significantly. A switching speedup factor of 3 to 5 has been obtained. The strategy also improves the robustness of the scheme allowing fast, sub-0.5 ns switching, less sensitive to the pulses’ properties.
Year
DOI
Venue
2019
10.1109/ESSDERC.2019.8901780
ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)
Keywords
Field
DocType
Spin-Orbit MRAM,perpendicular magnetization,magnetic field-free switching,two-pulse switching scheme
Magnetic field,Perpendicular,Anisotropy,Torque,Magnetoresistive random-access memory,Electronic engineering,Robustness (computer science),Materials science,Demagnetizing field,Optoelectronics,Speedup
Conference
ISSN
ISBN
Citations 
1930-8876
978-1-7281-1540-5
0
PageRank 
References 
Authors
0.34
0
7