Name
Title | ||
|---|---|---|
Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation |
Abstract | ||
|---|---|---|
GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ESSDERC.2019.8901702 | ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
FinFET,EdgeFET,lateral Schottky diode | Fin,Capacitance,Electronic engineering,Schottky diode,Materials science,Optoelectronics | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-7281-1540-5 | 0 |
PageRank | References | Authors |
0.34 | 1 | 9 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Sai | 1 | 0 | 0.34 |
| Dmytro B. But | 2 | 0 | 1.35 |
| M. Dub | 3 | 0 | 0.34 |
| Maciej Sakowicz | 4 | 0 | 0.34 |
| B. Grzywacz | 5 | 0 | 0.34 |
| P. Prystawko | 6 | 0 | 0.34 |
| Grzegorz Cywinski | 7 | 0 | 0.34 |
| Wojciech Knap | 8 | 36 | 10.83 |
| S. Rumyantsev | 9 | 0 | 0.34 |